Quantcast

Rice University researchers have found a way to stitch graphene and hexagonal boron nitride (h-BN) into a two-dimensional quilt that offers new paths of exploration for materials scientists.

The technique has implications for application of graphene materials in microelectronics that scale well below the limitations of silicon determined by Moore’s Law.

Layers of h-BN a single atom thick have the same lattice structure as graphene, but electrically the materials are at opposite ends of the spectrum: h-BN is an insulator, whereas graphene, the single-atom-layer form of carbon, is highly conductive. The ability to assemble them into a single lattice could lead to a rich variety of 2-D structures with electric properties ranging from metallic conductor to semiconductor to insulator.

Leave a Reply

Your email address will not be published. Required fields are marked *

*